Publication
Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors
dc.contributor.author | Kiazadeh, Asal | |
dc.contributor.author | Gomes, Henrique L. | |
dc.contributor.author | Barquinha, Pedro | |
dc.contributor.author | Martins, Jorge | |
dc.contributor.author | Rovisco, Ana | |
dc.contributor.author | Pinto, Joana V. | |
dc.contributor.author | Martins, Rodrigo | |
dc.contributor.author | Fortunato, Elvira | |
dc.date.accessioned | 2017-04-07T15:56:16Z | |
dc.date.available | 2017-04-07T15:56:16Z | |
dc.date.issued | 2016-08 | |
dc.description.abstract | The impact of a parylene top-coating layer on the illumination and bias stress instabilities of indium-gallium-zinc oxide thin-film transistors (TFTs) is presented and discussed. The parylene coating substantially reduces the threshold voltage shift caused by continuous application of a gate bias and light exposure. The operational stability improves by 75%, and the light induced instability is reduced by 35%. The operational stability is quantified by fitting the threshold voltage shift with a stretched exponential model. Storage time as long as 7 months does not cause any measurable degradation on the electrical performance. It is proposed that parylene plays not only the role of an encapsulation layer but also of a defect passivation on the top semiconductor surface. It is also reported that depletion-mode TFTs are less sensitive to light induced instabilities. This is attributed to a defect neutralization process in the presence of free electrons. Published by AIP Publishing. | |
dc.identifier.doi | 10.1063/1.4960200 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.other | AUT: HGO00803; | |
dc.identifier.uri | http://hdl.handle.net/10400.1/9363 | |
dc.language.iso | eng | |
dc.peerreviewed | yes | |
dc.relation | High-performance, Flexible, AUTOnomous Systems manufactured with Unique, Industrial ROLL-to-roll equipments | |
dc.relation.isbasedon | WOS:000383091400013 | |
dc.title | Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors | |
dc.type | journal article | |
dspace.entity.type | Publication | |
oaire.awardTitle | High-performance, Flexible, AUTOnomous Systems manufactured with Unique, Industrial ROLL-to-roll equipments | |
oaire.awardURI | info:eu-repo/grantAgreement/EC/H2020/644631/EU | |
oaire.citation.endPage | 51606 | |
oaire.citation.issue | 5 | |
oaire.citation.startPage | 51606 | |
oaire.citation.title | Applied Physics Letters | |
oaire.citation.volume | 109 | |
oaire.fundingStream | H2020 | |
person.familyName | Kiazadeh | |
person.familyName | Gomes | |
person.givenName | Asal | |
person.givenName | Henrique Leonel | |
person.identifier.ciencia-id | 0B15-2FBD-E1BA | |
person.identifier.orcid | 0000-0002-8422-5762 | |
person.identifier.orcid | 0000-0003-3664-4740 | |
person.identifier.rid | K-3193-2016 | |
person.identifier.scopus-author-id | 36702810600 | |
person.identifier.scopus-author-id | 7005305880 | |
project.funder.identifier | http://doi.org/10.13039/501100008530 | |
project.funder.name | European Commission | |
rcaap.rights | openAccess | |
rcaap.type | article | |
relation.isAuthorOfPublication | 7fb0adba-ec53-445a-81ca-0ce11c13da48 | |
relation.isAuthorOfPublication | 6da677b9-927f-423d-8657-448a0dccb67c | |
relation.isAuthorOfPublication.latestForDiscovery | 7fb0adba-ec53-445a-81ca-0ce11c13da48 | |
relation.isProjectOfPublication | fc966cb8-0420-4037-9115-33fe050948b6 | |
relation.isProjectOfPublication.latestForDiscovery | fc966cb8-0420-4037-9115-33fe050948b6 |
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