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Ultralow voltage resonant tunnelling diode electroabsorption modulator

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dc.contributor.authorFigueiredo, J. M. L.
dc.contributor.authorIronside, C. N.
dc.contributor.authorStanley, C. R.
dc.date.accessioned2012-06-05T22:25:46Z
dc.date.available2012-06-05T22:25:46Z
dc.date.issued2002
dc.date.updated2012-05-11T12:44:08Z
dc.description.abstractEmbedding a double barrier resonant tunnelling diode (RTD) in a unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD within the waveguide core introduces high non- linearity and negative di erential resistance in the current±voltage (I±V) characteristic of the waveguide. This makes the electric ®eld distribution across the waveguide core strongly dependent on the bias voltage: when the current decreases from the peak to the valley, there is an increase of the electric ®eld across the depleted core. The electric ®eld enhancement in the core-depleted layer causes the Franz±Keldysh absorption band-edge to red shift, which is responsible for the electroabsorption e ect. High-frequency ac signals as low as 100mV can induce electric ®eld high-speed switching, producing substantial light modulation (up to 15 dB) at photon energies slightly lower than the waveguide core band-gap energy. The key di erence between this device and conventional p-i-n EAMs is that the tunnelling characteristics of the RTD are employed to switch the electric ®eld across the core-depleted region; the RTD- EAM has in essence an integrated electronic ampli®er and, therefore, requires considerably less switching power.pt_PT
dc.identifier.citationFigueiredo, J. M. L.; Ironside, C. N.; Stanley, C. R. Ultralow voltage resonant tunnelling diode electroabsorption modulator, Journal of Modern Optics, 49, 5-6, 939-945, 2002.por
dc.identifier.issn0950-0340
dc.identifier.otherAUT: JLO01539;
dc.identifier.urihttp://hdl.handle.net/10400.1/1191
dc.language.isoengpor
dc.peerreviewedyespor
dc.subjectResonant tunneling diodepor
dc.titleUltralow voltage resonant tunnelling diode electroabsorption modulatorpor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage945por
oaire.citation.issue49 (5-6)por
oaire.citation.startPage939por
oaire.citation.titleJournal of Modern Opticspor
person.familyNameFigueiredo
person.givenNameJosé
person.identifier.orcid0000-0001-5668-7073
person.identifier.ridB-3378-2008
person.identifier.scopus-author-id7102525311
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublicationb4ed8989-3051-425e-a4b2-a7807f53e7a8
relation.isAuthorOfPublication.latestForDiscoveryb4ed8989-3051-425e-a4b2-a7807f53e7a8

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