Doping distribution of an operating organic light-emitting diode: a raman map analysis

Paez-Sierra, B. A.; Gomes, Henrique L.; Rangel-Kuoppa, V.T.

http://hdl.handle.net/10400.1/3278

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Authors

Paez-Sierra, B. A.

Gomes, Henrique L.

Rangel-Kuoppa, V.T.

Abstract(s)

We present confocal Raman spectroscopy (CSRS) maps of Poly(9,9-dioctylfluorene) (PFO)-based organic light emitting diode under operation. The CSRS analysis of the OLEDs was performed in normal room conditions. The non-emissive spots presented higher Raman intensity and broadening of the vibrational bands in comparison with the luminescent ones. The phenomenon is associated with an increase in the PFO - * absorption band and hence modification of the PFO doping which becomes favorable to the excitation wavelength, thus the Raman spectrum is enhanced. To the authors’ knowledge this image technique had been missed for the OLED technology.

Keywords

Organic electronics Raman spectroscopy PFO OLEDs Organic semiconductors

URI

http://hdl.handle.net/10400.1/3278

Citation

Paez-Sierra, B.-A.; Gomes, H.L.; Rangel-Kuoppa, V.-T.Doping distribution of an operating organic light-emitting diode: A Raman map analysis, AIP Conference Proceedings, 1399, NA, 875-876, 2011.