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Optical modulation at around 1550 nm in an InGaAlAs optical waveguide containing an InGaAs/AlAs resonant tunneling diode

1999Journal article Open access
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dc.contributor.authorFigueiredo, J. M. L.
dc.contributor.authorBoyd, A. R.
dc.contributor.authorStanley, C. R.
dc.contributor.authorIronside, C. N.
dc.contributor.authorMcMeekin, S. G.
dc.contributor.authorLeite, A. M. P.
dc.date.accessioned2012-05-31T18:03:55Z
dc.date.available2012-05-31T18:03:55Z
dc.date.issued1999
dc.date.updated2012-05-11T12:40:00Z
dc.description.abstractWe report electroabsorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing an InGaAs/AlAs double-barrier resonant tunneling diode ~RTD!. The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band edge to longer wavelengths via the Franz–Keldysh effect, thus changing the light-guiding characteristics of the waveguide. Low-frequency characterization of a device shows modulation up to 28 dB at 1565 nm. When dc biased close to the negative differential conductance region, the RTD optical waveguide behaves as an electroabsorption modulator integrated with a wide bandwidth electrical amplifier, offering a potential advantage over conventional pn modulators.por
dc.identifier.citationFigueiredo, J. M. L.; Boyd, A. R.; Stanley, C. R.; Ironside, C. N.; McMeekin, S. G.; Leite, A. M. P.Optical modulation at around 1550 nm in an InGaAlAs optical waveguide containing an InGaAs/AlAs resonant tunneling diode, Applied Physics Letters, vol. 75, 22, 3443-3443, 1999.por
dc.identifier.issn00036951
dc.identifier.otherAUT: JLO01539;
dc.identifier.urihttp://hdl.handle.net/10400.1/1183
dc.language.isoengpor
dc.peerreviewedyespor
dc.subjectResonant tunneling diodepor
dc.titleOptical modulation at around 1550 nm in an InGaAlAs optical waveguide containing an InGaAs/AlAs resonant tunneling diodepor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage3445por
oaire.citation.issueVolume 75, issue 22por
oaire.citation.startPage3443por
oaire.citation.titleApplied Physics Letterspor
person.familyNameFigueiredo
person.givenNameJosé
person.identifier.orcid0000-0001-5668-7073
person.identifier.ridB-3378-2008
person.identifier.scopus-author-id7102525311
rcaap.rightsopenAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublicationb4ed8989-3051-425e-a4b2-a7807f53e7a8
relation.isAuthorOfPublication.latestForDiscoveryb4ed8989-3051-425e-a4b2-a7807f53e7a8

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