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Current noise in resonance tunnel diodes based on InGaAlAs heterostructures
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Autores
Orientador(es)
Resumo(s)
Noise in resonance tunnel diodes based on InGaAlAs structures is studied at two frequencies. A
shot noise caused by the current flowing through two barriers of the heterostructure is identified. It was found
that if the voltage across the structure is within the first ascending section of the current–voltage characteristics,
the shot noise is suppressed with the suppression ratio
G
~ 1/15. In the second ascending section of the current–
voltage characteristic, the shot noise coincides with the shot noise of electrons passing through one barrier
(
G = 1) by the order of magnitude. The specific features of current flow affecting the behavior of noise in the
resonance tunnel structures are discussed.
Descrição
Palavras-chave
Resonant tunneling diode
Contexto Educativo
Citação
JML Figueiredo. Current noise in resonance tunnel diodes based on InGaAlAs heterostructures, Journal of Communications Technology and Electronics, 47, 2, 238-241, 2002.