Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

de Boer, W. D. A. M.; McGonigle, C.; Gregorkiewicz, Tom; Fujiwara, Y.; Tanabe, S.; Stallinga, Peter

http://hdl.handle.net/10400.1/11551

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Resumo(s)

We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (similar to 10%) and (similar to 3%) under continuous wave and pulsed excitation, respectively.

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Earth-Doped Gan Light-emitting diode Nanocrystals Ions Site

URI

http://hdl.handle.net/10400.1/11551

Editora

Nature Publishing Group

DOI

10.1038/srep05235

Coleções

FCT2-Artigos (em revistas ou actas indexadas)

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