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Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes

2011Journal article Open access
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dc.contributor.authorChen, Q.
dc.contributor.authorBory, Benjamin F.
dc.contributor.authorKiazadeh, Asal
dc.contributor.authorRocha, Paulo R. F.
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorVerbakel, F.
dc.contributor.authorDe Leeuw, Dago M.
dc.contributor.authorMeskers, S. C. J.
dc.date.accessioned2013-12-17T11:05:36Z
dc.date.available2013-12-17T11:05:36Z
dc.date.issued2011
dc.date.updated2013-12-16T22:16:43Z
dc.description.abstractMetal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the polymer. Detrapping of charge stored can be accomplished by illuminating with light under short-circuit conditions. The amount of stored charge is determined from the optically induced discharging current transient as a function of applied voltage and oxide thickness. When the charge density exceeds 8 1017/m2, an irreversible soft breakdown transition occurs to a non-volatile memory diode.por
dc.identifier.citationChen, Qian; Bory, Benjamin F.; Kiazadeh, Asal; Rocha, Paulo R. F.; Gomes, Henrique L.; Verbakel, Frank; De Leeuw, Dago M.; Meskers, Stefan C. J. Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes, Applied Physics Letters, 99, 8, 83305-83, 2011.por
dc.identifier.doihttp://dx.doi.org/10.1063/1.3628301
dc.identifier.issn0003-6951
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/3253
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherAmerican Institute of Physics AIPpor
dc.relationNoE FlexNet - Network of Excellence for building up Knowledge for improved Systems Integration for Flexible Organic and Large Area Electronics (FOLAE) and its exploitation
dc.titleOpto-electronic characterization of electron traps upon forming polymer oxide memory diodespor
dc.typejournal article
dspace.entity.typePublication
oaire.awardTitleNoE FlexNet - Network of Excellence for building up Knowledge for improved Systems Integration for Flexible Organic and Large Area Electronics (FOLAE) and its exploitation
oaire.awardURIinfo:eu-repo/grantAgreement/EC/FP7/247745/EU
oaire.citation.endPage83308por
oaire.citation.issue8por
oaire.citation.startPage83305por
oaire.citation.titleApplied Physics Letterspor
oaire.citation.volume99por
oaire.fundingStreamFP7
person.familyNameKiazadeh
person.familyNameRocha
person.familyNameGomes
person.givenNameAsal
person.givenNamePaulo
person.givenNameHenrique Leonel
person.identifier534265
person.identifier.ciencia-id0B15-2FBD-E1BA
person.identifier.ciencia-id2810-CAC1-6CA3
person.identifier.orcid0000-0002-8422-5762
person.identifier.orcid0000-0002-8917-9101
person.identifier.orcid0000-0003-3664-4740
person.identifier.ridK-3193-2016
person.identifier.ridL-1223-2015
person.identifier.scopus-author-id36702810600
person.identifier.scopus-author-id36773579600
person.identifier.scopus-author-id7005305880
project.funder.identifierhttp://doi.org/10.13039/501100008530
project.funder.nameEuropean Commission
rcaap.rightsopenAccesspor
rcaap.typearticlepor
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relation.isAuthorOfPublicatione7993271-11b1-4028-ac2e-88d631d67381
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relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c
relation.isProjectOfPublication60cb29a4-8ea2-4fdb-98b5-fa646774596c
relation.isProjectOfPublication.latestForDiscovery60cb29a4-8ea2-4fdb-98b5-fa646774596c

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