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Schottky barrier diodes from semiconducting polymers

dc.contributor.authorGomes, Henrique L.
dc.contributor.authorTaylor, D. M.
dc.date.accessioned2015-06-26T14:18:48Z
dc.date.available2015-06-26T14:18:48Z
dc.date.issued1997
dc.description.abstractSchottky barrier diodes based on Al/poly(3-methylthiophene)/Au have been fabricated and their electrical behaviour investigated. I-V characteristics revealed a dependence on the fabrication conditions, specifically on the time under vacuum prior to evaporation of the rectifying contact and post-metal annealing at elevated temperature. The available evidence is consistent with the formation of a thin insulating layer between the metal and the polymer following these procedures. Long periods under vacuum prior to deposition of the aluminium electrode reduced the likelihood of such a layer forming. Capacitance-voltage plots of the devices were stable to voltage cycling, so long as the forward voltage did not exceed similar to 1 V. Above this a small degree of hysteresis was observed, which is attributed to the filling/emptying of interface states or traps in the polymer.
dc.identifier.doihttps://dx.doi.org/10.1049/ip-cds:19971003
dc.identifier.issn1350-2409
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6650
dc.language.isoeng
dc.peerreviewedyes
dc.publisherInstitution of Engineering and Technology
dc.relation.isbasedonP-001-BPH
dc.titleSchottky barrier diodes from semiconducting polymers
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceLondon, England
oaire.citation.endPage122
oaire.citation.startPage117
oaire.citation.titleIEE Proceedings Circuits Devices and Systems
oaire.citation.titleIEE Colloquium on Molecular Electronic Devices
oaire.citation.volume144
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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