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Electrical characterization of semiconducting polymers

dc.contributor.authorStallinga, Peter
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorJones, G. W.
dc.contributor.authorTaylor, D. M.
dc.date.accessioned2015-06-26T14:18:47Z
dc.date.available2015-06-26T14:18:47Z
dc.date.issued1998
dc.description.abstractSchottky diodes resulting from an intimate contact of aluminum on electrodeposited poly(3-methylthiopene) were studied by admittance spectroscopy, capacitance-voltage measurements and voltaic and optically-induced current and capacitance transients. The loss tangents show the existence of interface states that can be removed by vacuum annealing. Furthermore, the C-V curves contradict the idea of movement of the dopant ions.
dc.identifier.issn0587-4246
dc.identifier.otherAUT: PJO01566; HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6638
dc.language.isoeng
dc.peerreviewedyes
dc.publisherPolish Academy of Sciences Institut of Physics
dc.relation.isbasedonP-001-73V
dc.titleElectrical characterization of semiconducting polymers
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceJaszowiec, Poland
oaire.citation.endPage548
oaire.citation.startPage545
oaire.citation.titleActa Physica Polonica A
oaire.citation.titleXXVII International School on Physics of Semiconducting Compounds
oaire.citation.volume94
person.familyNameStallinga
person.familyNameGomes
person.givenNamePeter
person.givenNameHenrique Leonel
person.identifier2477494
person.identifier.ciencia-idC917-2333-5797
person.identifier.orcid0000-0002-9581-6875
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id6701332987
person.identifier.scopus-author-id7005305880
rcaap.rightsopenAccess
rcaap.typearticle
relation.isAuthorOfPublicationa81fc5fb-94ec-4160-bfdc-ea33cfdbf216
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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