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Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor

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dc.contributor.authorRocha, P. F.
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorKiazadeh, Asal
dc.contributor.authorChen, Q.
dc.contributor.authorDe Leeuw, D. M.
dc.contributor.authorMeskers, S. C. J.
dc.date.accessioned2015-06-26T14:18:42Z
dc.date.available2015-06-26T14:18:42Z
dc.date.issued2011
dc.description.abstractThis work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s). This behavior is explained in terms of an equivalent circuit. It is also reported that there is not a particular threshold voltage to induce switching. Voltages below a particular threshold can still induce switching when applied for a long period of time. The time to switch is longer the lower is the applied voltage and follows an exponential behavior. This suggests that for a switching event to occur a certain amount of charge is required. © 2011 Materials Research Society.
dc.identifier.doihttps://dx.doi.org/10.1557/opl.2011.859
dc.identifier.isbn9781605113142
dc.identifier.issn0272-9172
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6601
dc.language.isoeng
dc.peerreviewedyes
dc.publisherMaterials Research Society
dc.relationNoE FlexNet - Network of Excellence for building up Knowledge for improved Systems Integration for Flexible Organic and Large Area Electronics (FOLAE) and its exploitation
dc.relation.isbasedonP-008-1PR
dc.titleSwitching speed in resistive random access memories (RRAMS) based on plastic semiconductor
dc.typeconference object
dspace.entity.typePublication
oaire.awardTitleNoE FlexNet - Network of Excellence for building up Knowledge for improved Systems Integration for Flexible Organic and Large Area Electronics (FOLAE) and its exploitation
oaire.awardURIinfo:eu-repo/grantAgreement/EC/FP7/247745/EU
oaire.citation.conferencePlaceSan Francisco
oaire.citation.endPage102
oaire.citation.startPage97
oaire.citation.titleMaterials Research Society Symposium Proceedings
oaire.citation.titleMRS Proceedings 2011
oaire.citation.volume1337
oaire.fundingStreamFP7
person.familyNameGomes
person.familyNameKiazadeh
person.givenNameHenrique Leonel
person.givenNameAsal
person.identifier.ciencia-id0B15-2FBD-E1BA
person.identifier.orcid0000-0003-3664-4740
person.identifier.orcid0000-0002-8422-5762
person.identifier.ridK-3193-2016
person.identifier.scopus-author-id7005305880
person.identifier.scopus-author-id36702810600
project.funder.identifierhttp://doi.org/10.13039/501100008530
project.funder.nameEuropean Commission
rcaap.rightsrestrictedAccess
rcaap.typeconferenceObject
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relation.isAuthorOfPublication7fb0adba-ec53-445a-81ca-0ce11c13da48
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c
relation.isProjectOfPublication60cb29a4-8ea2-4fdb-98b5-fa646774596c
relation.isProjectOfPublication.latestForDiscovery60cb29a4-8ea2-4fdb-98b5-fa646774596c

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