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Saturation effect for dependence of the electrical conductivity of planar oriented nematic liquid crystal 6CB on the concentration of Cu7PS6 nanoparticles

dc.contributor.authorKovalchuk, O. V.
dc.contributor.authorStudenyak, I. P.
dc.contributor.authorIzai, V. Yu
dc.contributor.authorRybak, S. O.
dc.contributor.authorPogodin, A. I.
dc.contributor.authorKopčanský, P.
dc.contributor.authorTimko, M.
dc.contributor.authorGdovinova, V.
dc.contributor.authorMariano, José
dc.contributor.authorKovalchuk, T. M.
dc.date.accessioned2019-03-07T10:41:33Z
dc.date.available2019-03-07T10:41:33Z
dc.date.issued2017
dc.description.abstractThe influence of Cu7PS6 nanoparticles with the average size 117 nm on the dielectric properties of planar oriented nematic liquid crystal 6CB has been investigated within the frequency range 10(1) ...10(6) Hz and at the temperature 293 K. It has been shown that when changing the concentration of nanoparticles within the range 0 to 1 wt.%, the conductivity of the liquid crystal changes stronger than its dielectric permittivity. It has been shown that the electrical conductivity increases monotonously with increasing the concentration of nanoparticles. However, for this dependence a saturation effect is observed. The mechanism of this effect was proposed.pt_PT
dc.description.versioninfo:eu-repo/semantics/publishedVersionpt_PT
dc.identifier.doi10.15407/spqeo20.04.437pt_PT
dc.identifier.issn1560-8034
dc.identifier.urihttp://hdl.handle.net/10400.1/12396
dc.language.isoengpt_PT
dc.peerreviewedyespt_PT
dc.publisherNational Academy of Sciences of Ukraine, V. Lashkaryov Institute of Semiconductor Physicspt_PT
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/pt_PT
dc.subjectNematic liquid crystalpt_PT
dc.subjectSuperionic nanoparticlespt_PT
dc.subjectElectrical conductivitypt_PT
dc.subjectDielectric propertiespt_PT
dc.subjectSaturation effectpt_PT
dc.titleSaturation effect for dependence of the electrical conductivity of planar oriented nematic liquid crystal 6CB on the concentration of Cu7PS6 nanoparticlespt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage441pt_PT
oaire.citation.issue4pt_PT
oaire.citation.startPage437pt_PT
oaire.citation.titleSemiconductor Physics, Quantum Electronics and Optoelectronicspt_PT
oaire.citation.volume20pt_PT
person.familyNameMariano
person.givenNameJosé
person.identifier.ciencia-idDE19-7D9D-00D0
person.identifier.orcid0000-0002-8480-617X
person.identifier.ridO-5252-2018
person.identifier.scopus-author-id12647832000
rcaap.rightsopenAccesspt_PT
rcaap.typearticlept_PT
relation.isAuthorOfPublication16ee0cfc-3dd4-40fa-8401-b435aa41ef7d
relation.isAuthorOfPublication.latestForDiscovery16ee0cfc-3dd4-40fa-8401-b435aa41ef7d

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