Publication
Integration of a RTD with an optical waveguide to form a high speed electroabsorption modulator
| dc.contributor.author | Figueiredo, J. M. L. | |
| dc.contributor.author | Ironside, C. N. | |
| dc.contributor.author | Leite, A. M. P. | |
| dc.contributor.author | Stanley, C. R. | |
| dc.date.accessioned | 2012-06-09T07:14:50Z | |
| dc.date.available | 2012-06-09T07:14:50Z | |
| dc.date.issued | 1997-11 | |
| dc.description.abstract | High speed Optoelectronic modulation using the resonant tunnelling characteristics by interaction of a resonant tunnelling diode (RTD) in the middle of an unipolar ridge optical waveguide based on the GaAs/AlGaAs system is investigated. This interaction of an RTD within an optical waveguide introduces high non-linearities into the electrical characteristics of the waveguide by inducing large electric field changes on the collector region which give rise to a band-edge shift via the Franz-Keldysh effect that can be used for electroabsorption modulation up to millimeter-wave frequencies of light at photon energies close to the bandgap energy of the semiconductor, in this case around 900 nm. The device allows efficient high speed intensity modulation requiring a few hundreds of mV as drive voltage. Streak camera studies have shown around 4 dB modulation depth at 14 GHz for an applied voltage at 1 GHz of around 0.4 V, implying a bandwidth-to-voltage ratio of 33 GHz/V. | por |
| dc.description.sponsorship | JNICT/Praxis XXI, Portugal | por |
| dc.identifier.other | AUT: JLO01539; | |
| dc.identifier.uri | http://hdl.handle.net/10400.1/1205 | |
| dc.language.iso | eng | por |
| dc.peerreviewed | yes | por |
| dc.relation.ispartofseries | IEE Colloquium (Digest);No. 1997/166 | |
| dc.subject | High speed optical techniques | por |
| dc.subject | Optical waveguides | por |
| dc.subject | Resonant tunneling devices | por |
| dc.subject | Electro-absortion modulators | por |
| dc.title | Integration of a RTD with an optical waveguide to form a high speed electroabsorption modulator | por |
| dc.type | conference object | |
| dspace.entity.type | Publication | |
| oaire.citation.conferencePlace | King's College London, Uk | por |
| oaire.citation.endPage | 357 | por |
| oaire.citation.startPage | 352 | por |
| oaire.citation.title | High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on | por |
| person.familyName | Figueiredo | |
| person.givenName | José | |
| person.identifier.orcid | 0000-0001-5668-7073 | |
| person.identifier.rid | B-3378-2008 | |
| person.identifier.scopus-author-id | 7102525311 | |
| rcaap.rights | restrictedAccess | por |
| rcaap.type | conferenceObject | por |
| relation.isAuthorOfPublication | b4ed8989-3051-425e-a4b2-a7807f53e7a8 | |
| relation.isAuthorOfPublication.latestForDiscovery | b4ed8989-3051-425e-a4b2-a7807f53e7a8 |