Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/3278
Título: Doping distribution of an operating organic light-emitting diode: a raman map analysis
Autor: Paez-Sierra, B. A.
Gomes, Henrique L.
Rangel-Kuoppa, V.T.
Palavras-chave: Organic electronics
Raman spectroscopy
Organic semiconductors
Data: 2011
Editora: AIP American Institute of Physics
Citação: Paez-Sierra, B.-A.; Gomes, H.L.; Rangel-Kuoppa, V.-T.Doping distribution of an operating organic light-emitting diode: A Raman map analysis, AIP Conference Proceedings, 1399, NA, 875-876, 2011.
Resumo: We present confocal Raman spectroscopy (CSRS) maps of Poly(9,9-dioctylfluorene) (PFO)-based organic light emitting diode under operation. The CSRS analysis of the OLEDs was performed in normal room conditions. The non-emissive spots presented higher Raman intensity and broadening of the vibrational bands in comparison with the luminescent ones. The phenomenon is associated with an increase in the PFO - * absorption band and hence modification of the PFO doping which becomes favorable to the excitation wavelength, thus the Raman spectrum is enhanced. To the authors’ knowledge this image technique had been missed for the OLED technology.
Peer review: yes
URI: http://hdl.handle.net/10400.1/3278
DOI: http://dx.doi.org/10.1063/1.3666655
ISSN: 0094-243X
Versão do Editor: http://scitation.aip.org/docserver/fulltext/aip/proceeding/aipcp/flat/10.1063/1.3666655/1.3666655.pdf?expires=1388764211&id=id&accname=371156&checksum=3161464181E43A065447E41E68BB3F1D
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