Browsing by Author "Cölle, M."
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- Determining carrier mobility with a metal–insulator–semiconductor structurePublication . Stallinga, Peter; Benvenho, A. R. V.; Smits, E. C. P.; Mathijssen, S. G. J.; Cölle, M.; Gomes, Henrique L.; De Leeuw, Dago M.The electron and hole mobility of nickel-bis(dithiolene) (NiDT) are determined in a metal– insulator–semiconductor (MIS)structure using admittance spectroscopy. The relaxation times found in the admittance spectra are attributed to the diffusion time of carriers to reach the insulator interface and via Einstein’s relation this yields the mobility values. In this way, an electron mobility of 1:9 104 cm2=Vs and a hole mobility of 3:9 106 cm2=Vs were found. It is argued that the low mobility is caused by an amphoteric mid-gap trap level. The activation energy for electrons and holes from these traps is found to be 0.46 eV and 0.40 eV, respectively.
- Switching in polymeric resistance random-access memories (RRAMS)Publication . Gomes, Henrique L.; Benvenho, A. R. V.; De Leeuw, Dago M.; Cölle, M.; Stallinga, Peter; Verbakel, F.; Taylor, D. M.Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place. A tentative model is presented that can account for the observed behavior. The impedance analysis shows that the device does not behave homogenously over the entire electrode area and only a fraction of the device area gives rise to switching.