Determining carrier mobility with a metal–insulator–semiconductor structure

Stallinga, Peter; Benvenho, A. R. V.; Smits, E. C. P.; Mathijssen, S. G. J.; Cölle, M.; Gomes, Henrique L.; De Leeuw, Dago M.

http://hdl.handle.net/10400.1/3285

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Abstract(s)

The electron and hole mobility of nickel-bis(dithiolene) (NiDT) are determined in a metal– insulator–semiconductor (MIS)structure using admittance spectroscopy. The relaxation times found in the admittance spectra are attributed to the diffusion time of carriers to reach the insulator interface and via Einstein’s relation this yields the mobility values. In this way, an electron mobility of 1:9 104 cm2=Vs and a hole mobility of 3:9 106 cm2=Vs were found. It is argued that the low mobility is caused by an amphoteric mid-gap trap level. The activation energy for electrons and holes from these traps is found to be 0.46 eV and 0.40 eV, respectively.

Keywords

Charge-carrier mobility Admittance spectroscopy MIS diode

URI

http://hdl.handle.net/10400.1/3285

Citation

Stallinga, P.; Benvenho, A. R. V.; Smits, E. C. P.; Mathijssen, S. G. J.; Cölle, M.; Gomes, H. L.; De Leeuw, D. M. Determining carrier mobility with a metal–insulator–semiconductor structure, Organic Electronics, 9, 5, 735-739, 2008.