Browsing by Author "McCulloch, I."
Now showing 1 - 2 of 2
Results Per Page
Sort Options
- Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistorsPublication . Mathijssen, S. G. J.; Colle, M.; Gomes, Henrique L.; Smits, E. C. P.; de Boer, B.; McCulloch, I.; Bobbert, P. A.; de Leeuw, D. M.The electrical instability of organic field-effect transistors is investigated. We observe that the threshold-voltage shift (see figure) shows a stretched-exponential time dependence under an applied gate bias. The activation energy of 0.6 eV is common for our and all other organic transistors reported so far. The constant activation energy supports charge trapping by residual water as the common origin.
- Inkjet-printed organic electronics: Operational stability and reliability issuesPublication . Medeiros, M. C. R.; Martinez Domingo, C.; Ramon, E.; Negrier, A. T.; Sowade, E.; Mitra, K. Y.; Baumann, R. R.; McCulloch, I.; Carrabina, J.; Gomes, Henrique L.The operational stability of all-inkjet printed transistors is reported. At room temperature the threshold voltage shifts following a stretched exponential with a relaxation time τ=1×103 s. Two distinct trap sites active in different temperature ranges, one at 200-250 K and other above 310 K cause the electrical instability. Both types of traps capture holes and can be fast neutralized by photogenerated electrons. Optically induced detrapping currents confirm the differences in trap signature. It is proposed, that the traps have a common physical origin related to water. © The Electrochemical Society.