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Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

2015-11Journal article Open access
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dc.contributor.authorBory, Benjamin F.
dc.contributor.authorRocha, Paulo
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorde Leeuw, Dago M.
dc.contributor.authorMeskers, Stefan C. J.
dc.date.accessioned2018-12-07T14:57:56Z
dc.date.available2018-12-07T14:57:56Z
dc.date.issued2015-11
dc.description.abstractDiodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10(17) m(-2). We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching. (C) 2015 Author(s).
dc.description.sponsorshipDutch Polymer Institute (DPI), BISTABLE [704]; Fundacao para Ciencia e Tecnologia (FCT) through the research Instituto de Telecommunicacoes (IT-Lx); project Memristor based Adaptive Neuronal Networks (MemBrAiNN) [PTDC/CTM-NAN/122868/2010]; European Community Seventh Framework Programme FP7', ONE-P [212311]; Dutch Ministry of Education, Culture and Science (Gravity Program) [024.001.035]
dc.description.versioninfo:eu-repo/semantics/publishedVersion
dc.identifier.doi10.1063/1.4936349
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.urihttp://hdl.handle.net/10400.1/11771
dc.language.isoeng
dc.peerreviewedyes
dc.publisherAmer Inst Physics
dc.relationOrganic Nanomaterials for Electronics and Photonics: Design, Synthesis, Characterization, Processing, Fabrication and Applications
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectControlled negative-resistance
dc.subjectOxide-films
dc.subjectAl-Al2O3-Au Diodes
dc.subjectTunnel-junctions
dc.subjectThin-films
dc.subject1/F Noise
dc.subjectDevices
dc.subjectFluctuations
dc.subjectStates
dc.titleUnipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon
dc.typejournal article
dspace.entity.typePublication
oaire.awardTitleOrganic Nanomaterials for Electronics and Photonics: Design, Synthesis, Characterization, Processing, Fabrication and Applications
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/COMPETE/PTDC%2FCTM-NAN%2F122868%2F2010/PT
oaire.awardURIinfo:eu-repo/grantAgreement/EC/FP7/212311/EU
oaire.citation.issue20
oaire.citation.startPage205503
oaire.citation.titleJournal of Applied Physics
oaire.citation.volume118
oaire.fundingStreamCOMPETE
oaire.fundingStreamFP7
person.familyNameRocha
person.familyNameGomes
person.givenNamePaulo
person.givenNameHenrique Leonel
person.identifier534265
person.identifier.ciencia-id2810-CAC1-6CA3
person.identifier.orcid0000-0002-8917-9101
person.identifier.orcid0000-0003-3664-4740
person.identifier.ridL-1223-2015
person.identifier.scopus-author-id36773579600
person.identifier.scopus-author-id7005305880
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.identifierhttp://doi.org/10.13039/501100008530
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameEuropean Commission
rcaap.rightsopenAccess
rcaap.typearticle
relation.isAuthorOfPublicatione7993271-11b1-4028-ac2e-88d631d67381
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscoverye7993271-11b1-4028-ac2e-88d631d67381
relation.isProjectOfPublication036ba83d-1dd0-4ac9-bab3-10b8bb1ca7c8
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