Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles

Kiazadeh, Asal; Rocha, P. R.; Chen, Q.; Gomes, Henrique L.

http://hdl.handle.net/10400.1/6646

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Resumo(s)

It is demonstrated that planar structures based on silver nanoparticleshosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena.

URI

http://hdl.handle.net/10400.1/6646

Editora

Springer-Verlag

DOI

https://dx.doi.org/10.1007/978-3-642-19170-1_65

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FCT2-Artigos (em revistas ou actas indexadas)

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