Influence of fabrication conditions on the electrical behaviour of polymer Schottky diodes

Gomes, Henrique L.; Jones, G. W.; Taylor, D. M.

http://hdl.handle.net/10400.1/6596

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Authors

Gomes, Henrique L.

Jones, G. W.

Taylor, D. M.

Abstract(s)

Evidence is presented which shows that anomalies in the I-V characteristics of Schottky diodes formed from electrodeposited poly(3-methylthiophene) are related to the time films are held under vacuum prior to deposition of the rectifying aluminium electrode. For short times (similar to 15 mins) a plateau appears in the forward bias characteristic which disappears leading to a significant voltage offset as the device ages or is driven into high forward bias.