Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles

Kiazadeh, Asal; Gomes, Henrique L.; Rosa da Costa, Ana; Moreira, José; De Leeuw, Dago M.; Meskers, S. C. J.

http://hdl.handle.net/10400.1/2720

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Abstract(s)

Resistive switching is investigated in thin-film planar diodes using silver oxide nanoparticles capped in a polymer. The conduction channel is directly exposed to the ambient atmosphere. Two types of switching are observed. In air, the hysteresis loop in the current–voltage characteristics is S-shaped. The high conductance state is volatile and unreliable. The switching is mediated by moisture and electrochemistry. In vacuum, the hysteresis loops are symmetric, N-shaped and exhibit a negative differential resistance region. The conductance states are non-volatile with good data retention, programming cycling endurance and large current modulation ratio. The switching is attributed to electroforming of silver oxide clusters.

Keywords

Nanoparticles Resistive switching Non-volatile memory

URI

http://hdl.handle.net/10400.1/2720

Citation

Kiazadeh, Asal; Gomes, Henrique L.; Rosa da Costa, Ana M.; Moreira, José A.; de Leeuw, Dago M.; Meskers, Stefan C. J.Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles, Thin Solid Films, 522, N/A, 407-411, 2012.