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Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles
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Orientador(es)
Resumo(s)
Resistive switching is investigated in thin-film planar diodes using silver oxide nanoparticles capped in a polymer. The conduction channel is directly exposed to the ambient atmosphere. Two types of switching are observed. In air, the hysteresis loop in the current–voltage characteristics is S-shaped. The high conductance state is volatile and unreliable. The switching is mediated by moisture and electrochemistry. In vacuum, the hysteresis loops are symmetric, N-shaped and exhibit a negative differential resistance region. The conductance states are non-volatile with good data retention, programming cycling endurance and large current modulation ratio. The switching is attributed to electroforming of silver oxide clusters.
Descrição
Palavras-chave
Nanoparticles Resistive switching Non-volatile memory
Contexto Educativo
Citação
Kiazadeh, Asal; Gomes, Henrique L.; Rosa da Costa, Ana M.; Moreira, José A.; de Leeuw, Dago M.; Meskers, Stefan C. J.Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles, Thin Solid Films, 522, N/A, 407-411, 2012.
Editora
Elsevier