Small signal analysis of MPCVD diamond Schottky diodes

Mendes, J. C.; L, Gomes H; Trippe, S. C.; Mukherjee, D.; Pereira, L.

http://hdl.handle.net/10400.1/14398

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Abstract(s)

Polycrystalline diamond (PCD) grown by chemical vapor deposition (CVD) is an intrinsic semiconductor particularly attractive for high power/high temperature devices. Nevertheless, the physical models for injection and transport of electrical carriers are remarkable complex and depend on the microstructure and composition of carbon species in the film. In this work, free-standing CVD PCD films were deposited by microwave plasma CVD (MPCVD) and were characterized by Raman spectroscopy. Gold and aluminum circular contacts were deposited on the growth surface in order to fabricate a planar diode. The current-voltage characteristics were measured at different temperatures. The application of a non-homogeneous barrier model to fit the current-voltage characteristics reveals the existence of two barriers related with the grain/electrode and grain boundary/electrode interfaces. Small signal analysis was performed at room temperature to understand the nature of electrical process involved in the injection and carrier transport. The existence of parallel channels through with charge flows was confirmed and the fittings suggest the existence of a nearly equipotential surface at the interface diamond/electrode. The physical origin of the inclusion of a constant phase element in the equivalent circuit model is discussed. The results obtained are of particular importance to further devices fabrication. Prime novelty: An equivalent circuit model for the diamond Schottky diode is proposed

the physical origin of the constant phase element included in the model is discussed.