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Determining carrier mobility with a metal–insulator–semiconductor structure

2008Journal article Restricted access
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dc.contributor.authorStallinga, Peter
dc.contributor.authorBenvenho, A. R. V.
dc.contributor.authorSmits, E. C. P.
dc.contributor.authorMathijssen, S. G. J.
dc.contributor.authorCölle, M.
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorDe Leeuw, Dago M.
dc.date.accessioned2014-01-07T11:10:44Z
dc.date.available2014-01-07T11:10:44Z
dc.date.issued2008
dc.date.updated2014-01-02T18:41:56Z
dc.description.abstractThe electron and hole mobility of nickel-bis(dithiolene) (NiDT) are determined in a metal– insulator–semiconductor (MIS)structure using admittance spectroscopy. The relaxation times found in the admittance spectra are attributed to the diffusion time of carriers to reach the insulator interface and via Einstein’s relation this yields the mobility values. In this way, an electron mobility of 1:9 104 cm2=Vs and a hole mobility of 3:9 106 cm2=Vs were found. It is argued that the low mobility is caused by an amphoteric mid-gap trap level. The activation energy for electrons and holes from these traps is found to be 0.46 eV and 0.40 eV, respectively.por
dc.identifier.citationStallinga, P.; Benvenho, A. R. V.; Smits, E. C. P.; Mathijssen, S. G. J.; Cölle, M.; Gomes, H. L.; De Leeuw, D. M. Determining carrier mobility with a metal–insulator–semiconductor structure, Organic Electronics, 9, 5, 735-739, 2008.por
dc.identifier.doihttp://dx.doi.org/10.1016/j.orgel.2008.05.007
dc.identifier.issn15661199
dc.identifier.otherAUT: PJO01566; HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/3285
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherElsevierpor
dc.subjectCharge-carrier mobilitypor
dc.subjectAdmittance spectroscopypor
dc.subjectMIS diodepor
dc.titleDetermining carrier mobility with a metal–insulator–semiconductor structurepor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage739por
oaire.citation.issue5por
oaire.citation.startPage735por
oaire.citation.titleOrganic Electronicspor
oaire.citation.volume9por
person.familyNameStallinga
person.familyNameGomes
person.givenNamePeter
person.givenNameHenrique Leonel
person.identifier2477494
person.identifier.ciencia-idC917-2333-5797
person.identifier.orcid0000-0002-9581-6875
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id6701332987
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublicationa81fc5fb-94ec-4160-bfdc-ea33cfdbf216
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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