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Electrical properties of thin-films wide-band gap semiconductor TiO(2) prepared by CVD

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dc.contributor.authorBessergenev, V.
dc.contributor.authorGomes, Henrique L.
dc.date.accessioned2014-01-09T10:49:27Z
dc.date.available2014-01-09T10:49:27Z
dc.date.issued2010
dc.date.updated2014-01-02T19:20:37Z
dc.description.abstractHigh dielectric constant TiO2 thin films are promising for gate insulator in 100-nm microelectronic technology. In this study rutile and anatase phase TiO2 thin films were prepared by Chemical Vapour Deposition (CVD) method. Bulk and surface chemical composition of thin films were characterized by high-resolution Laser Ionization Mass Spectrometry (LIMS) and by X-ray Photoemission Spectroscopy (XPS). Crystal structure was studied by (XRD). Silicon based Metal-Insulator semiconductor (MIS) capacitors formed on the high-k dielectric TiO2 were fabricated and characterized using small signal impedance studies as function of frequency and current vs voltage measurements. As it was shown from I–V characteristics, the Shockley equation adequately describes the conductivity mechanism in low field region. By analysis of I–V characteristics it was also found that there is change in carrier conduction mechanism from Shockley regime to the nonlinear Frenkel–Poole mechanism.por
dc.identifier.citationBessergenev, V.; Gomes H. L. Electrical properties of thin-films wide-band gap semiconductor TiO(2) prepared by CVD, Physica Status Solidi C - Current Topics in Solid State Physics, 7, 3-4, 949-952, 2010.por
dc.identifier.doihttp://dx.doi.org/10.1002/pssc.200982713
dc.identifier.issn1862-6351
dc.identifier.otherAUT: VBE01263; HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/3317
dc.language.isoengpor
dc.peerreviewedyespor
dc.publisherWiley-VCH Verlagpor
dc.titleElectrical properties of thin-films wide-band gap semiconductor TiO(2) prepared by CVDpor
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage952por
oaire.citation.issue3-4por
oaire.citation.startPage949por
oaire.citation.titlePhysica Status Solidi C - Current Topics in Solid State Physicspor
oaire.citation.volume7por
person.familyNameBessergenev
person.familyNameGomes
person.givenNameValentin
person.givenNameHenrique Leonel
person.identifier.ciencia-id5F19-8237-1A27
person.identifier.orcid0000-0001-5790-8501
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id6701722001
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccesspor
rcaap.typearticlepor
relation.isAuthorOfPublication368c596c-3756-4e31-956d-e45dba313b76
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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