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Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

dc.contributor.authorMathijssen, S. G. J.
dc.contributor.authorColle, M.
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorSmits, E. C. P.
dc.contributor.authorde Boer, B.
dc.contributor.authorMcCulloch, I.
dc.contributor.authorBobbert, P. A.
dc.contributor.authorde Leeuw, D. M.
dc.date.accessioned2015-06-26T14:18:48Z
dc.date.available2015-06-26T14:18:48Z
dc.date.issued2007
dc.description.abstractThe electrical instability of organic field-effect transistors is investigated. We observe that the threshold-voltage shift (see figure) shows a stretched-exponential time dependence under an applied gate bias. The activation energy of 0.6 eV is common for our and all other organic transistors reported so far. The constant activation energy supports charge trapping by residual water as the common origin.
dc.identifier.doihttps://dx.doi.org/10.1002/adma.200602798
dc.identifier.issn0935-9648
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6647
dc.language.isoeng
dc.peerreviewedyes
dc.publisherWiley-VCH Verlag
dc.relation.isbasedonP-004-6VF
dc.titleDynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage2789
oaire.citation.startPage2785
oaire.citation.titleAdvanced Materials
oaire.citation.volume19
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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