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Reproducible resistive switching in nonvolatile organic memories

dc.contributor.authorVerbakel, F.
dc.contributor.authorMeskers, S. C. J.
dc.contributor.authorJanssen, R. A. J.
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorCoelle, M.
dc.contributor.authorBuechel, M.
dc.contributor.authorde Leeuw, D. M.
dc.date.accessioned2015-06-26T14:18:47Z
dc.date.available2015-06-26T14:18:47Z
dc.date.issued2007
dc.description.abstractResistive switching in nonvolatile, two terminal organic memories can be due to the presence of a native oxide layer at an aluminum electrode. Reproducible solid state memories can be realized by deliberately adding a thin sputtered Al2O3 layer to nominal electron-only, hole-only, and bipolar organic diodes. Before memory operation, the devices have to be formed at an electric field of 10(9) V/m, corresponding to soft breakdown of Al2O3. After forming, the structures show pronounced negative differential resistance and the local maximum in the current scales with the thickness of the oxide layer. The polymer acts as a current limiting series resistance.
dc.identifier.doihttps://dx.doi.org/10.1063/1.2806275
dc.identifier.issn0003-6951
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6642
dc.language.isoeng
dc.peerreviewedyes
dc.publisherAmerican Institute of Physics
dc.relation.isbasedonP-004-6BB
dc.titleReproducible resistive switching in nonvolatile organic memories
dc.typejournal article
dspace.entity.typePublication
oaire.citation.startPage192103
oaire.citation.titleApplied Physics Letters
oaire.citation.volume91
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsopenAccess
rcaap.typearticle
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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