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The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

2013Journal article Open Access
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dc.contributor.authorRocha, Paulo R. F.
dc.contributor.authorKiazadeh, Asal
dc.contributor.authorDe Leeuw, Dago M.
dc.contributor.authorMeskers, S. C. J.
dc.contributor.authorVerbakel, F.
dc.contributor.authorTaylor, D. M.
dc.contributor.authorGomes, Henrique L.
dc.date.accessioned2015-09-30T09:10:44Z
dc.date.available2015-09-30T09:10:44Z
dc.date.issued2013
dc.date.updated2015-09-22T11:09:29Z
dc.description.abstractThe dynamic response of a non-volatile, bistable resistive memory fabricated in the form of Al2O3/polymer diodes has been probed in both the off- and on-state using triangular and step voltage profiles. The results provide insight into the wide spread in switching times reported in the literature and explain an apparently anomalous behaviour of the on-state, namely the disappearance of the negative differential resistance region at high voltage scan rates which is commonly attributed to a “dead time” phenomenon. The off-state response follows closely the predictions based on a classical, two-layer capacitor description of the device. As voltage scan rates increase, the model predicts that the fraction of the applied voltage, Vox , appearing across the oxide decreases. Device responses to step voltages in both the off- and on-state show that switching events are characterized by a delay time. Coupling such delays to the lower values of Vox attained during fast scan rates, the anomalous observation in the on-state that, device currents decrease with increasing voltage scan rate, is readily explained. Assuming that a critical current is required to turn off a conducting channel in the oxide, a tentative model is suggested to explain the shift in the onset of negative differential resistance to lower voltages as the voltage scan rate increases. The findings also suggest that the fundamental limitations on the speed of operation of a bilayer resistive memory are the time- and voltage-dependences of the switch-on mechanism and not the switch-off process.pt_PT
dc.identifier.citationRocha, P.R.F.; Kiazadeh, A.; De Leeuw, D.M.; Meskers, S.C.J.; Verbakel, F.; Taylor, D.M.; Gomes, H.L.The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories, Journal of Applied Physics, 113, 13, 134504-134506, 2013.pt_PT
dc.identifier.doihttp://dx.doi.org/10.1063/1.4799093
dc.identifier.issn0003-6951
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6849
dc.language.isoengpt_PT
dc.peerreviewedyespt_PT
dc.publisherAmerican Institute of Physicspt_PT
dc.subjectNegative resistancept_PT
dc.subjectPolymerspt_PT
dc.subjectElectrodespt_PT
dc.subjectMagnetization reversalspt_PT
dc.subjectPolymer filmspt_PT
dc.titleThe role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memoriespt_PT
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage134506pt_PT
oaire.citation.startPage134504pt_PT
oaire.citation.titleJournal of Applied Physicspt_PT
oaire.citation.volume113pt_PT
person.familyNameRocha
person.familyNameKiazadeh
person.familyNameGomes
person.givenNamePaulo
person.givenNameAsal
person.givenNameHenrique Leonel
person.identifier534265
person.identifier.ciencia-id2810-CAC1-6CA3
person.identifier.ciencia-id0B15-2FBD-E1BA
person.identifier.orcid0000-0002-8917-9101
person.identifier.orcid0000-0002-8422-5762
person.identifier.orcid0000-0003-3664-4740
person.identifier.ridL-1223-2015
person.identifier.ridK-3193-2016
person.identifier.scopus-author-id36773579600
person.identifier.scopus-author-id36702810600
person.identifier.scopus-author-id7005305880
rcaap.rightsopenAccesspt_PT
rcaap.typearticlept_PT
relation.isAuthorOfPublicatione7993271-11b1-4028-ac2e-88d631d67381
relation.isAuthorOfPublication7fb0adba-ec53-445a-81ca-0ce11c13da48
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery7fb0adba-ec53-445a-81ca-0ce11c13da48

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