Spatially-resolved photocapacitance measurements to study defects in a-Si:H based p-i-n particle detectors

Thick large-area particle or X-ray detectors suffer degradation during operation due to creation of defects that act as deep traps. Measuring the photocurrent under homogeneously absorbed weak light can monitor variation in detector performance. We describe how photocapacitance can be used as an alternative method to measure the creation of defects and their energy level after intense irradiation with protons or He ions at 1.5 MeV and after exposure to intense laser pulses. The possibility to detect small areas of high defect density in a large-area detector structure is discussed.

Keywords

Amorphous silicon detector Photocapacitance Radiation resistance

URI

http://hdl.handle.net/10400.1/3302

Citation

Casteleiro, C.; Schwarz, R.; Mardolcar, U.; Maçarico, A.; Martins, J.; Vieira, M.; Wuensch, F.; Kunst, M.; Morgado, E.; Stallinga, P.; Gomes, H. L. Spatially-resolved photocapacitance measurements to study defects in a-Si:H based p-i-n particle detectors, Thin Solid Films, 516, 15, 5118-5121, 2008.

Publisher

Elsevier

DOI

hppt://dx.doi.org/10.1016/j.tsf.2008.01.012

Collections

FCT2-Artigos (em revistas ou actas indexadas)

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