Photocurrents in P3MeT Schottky barrier diodes

Jones, G. W.; Taylor, D. M.; Gomes, Henrique L.

http://hdl.handle.net/10400.1/6626

Use this identifier to reference this record.

Name:	Description:	Size:	Format:
Photocurrents in P3MeT Schottky barrier diodes.pdf		223.01 KB	Adobe PDF	Download

Send Feedback

Authors

Jones, G. W.

Taylor, D. M.

Gomes, Henrique L.

Abstract(s)

The photocurrent action spectrum of a Schottky diode formed from electrodeposited poly(3-methylthiophene) is shown to follow closely the UV-visible absorption spectrum. At low forward bias, the peak photocurrent asymptotes to the expected square-root dependence on total potential, V-t, across the depletion region. At high reverse bias the superlinear dependence of the photocurrent on V-t suggests that internal photoemission from the rectifying aluminium electrode may be the dominant process.