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Photocurrents in P3MeT Schottky barrier diodes

dc.contributor.authorJones, G. W.
dc.contributor.authorTaylor, D. M.
dc.contributor.authorGomes, Henrique L.
dc.date.accessioned2015-06-26T14:18:45Z
dc.date.available2015-06-26T14:18:45Z
dc.date.issued1999
dc.description.abstractThe photocurrent action spectrum of a Schottky diode formed from electrodeposited poly(3-methylthiophene) is shown to follow closely the UV-visible absorption spectrum. At low forward bias, the peak photocurrent asymptotes to the expected square-root dependence on total potential, V-t, across the depletion region. At high reverse bias the superlinear dependence of the photocurrent on V-t suggests that internal photoemission from the rectifying aluminium electrode may be the dominant process.
dc.identifier.doihttps://dx.doi.org/10.1016/S0379-6779(98)01110-2
dc.identifier.issn0379-6779
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6626
dc.language.isoeng
dc.peerreviewedyes
dc.publisherElsevier Science
dc.relation.isbasedonP-001-4GZ
dc.titlePhotocurrents in P3MeT Schottky barrier diodes
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceMontpellier, France
oaire.citation.endPage432
oaire.citation.startPage431
oaire.citation.titleSynthetic Metals
oaire.citation.titleInternational Conference on Science and Technology of Synthetic Metals (ICSM 98)
oaire.citation.volume101
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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