Publication
Photocurrents in P3MeT Schottky barrier diodes
dc.contributor.author | Jones, G. W. | |
dc.contributor.author | Taylor, D. M. | |
dc.contributor.author | Gomes, Henrique L. | |
dc.date.accessioned | 2015-06-26T14:18:45Z | |
dc.date.available | 2015-06-26T14:18:45Z | |
dc.date.issued | 1999 | |
dc.description.abstract | The photocurrent action spectrum of a Schottky diode formed from electrodeposited poly(3-methylthiophene) is shown to follow closely the UV-visible absorption spectrum. At low forward bias, the peak photocurrent asymptotes to the expected square-root dependence on total potential, V-t, across the depletion region. At high reverse bias the superlinear dependence of the photocurrent on V-t suggests that internal photoemission from the rectifying aluminium electrode may be the dominant process. | |
dc.identifier.doi | https://dx.doi.org/10.1016/S0379-6779(98)01110-2 | |
dc.identifier.issn | 0379-6779 | |
dc.identifier.other | AUT: HGO00803; | |
dc.identifier.uri | http://hdl.handle.net/10400.1/6626 | |
dc.language.iso | eng | |
dc.peerreviewed | yes | |
dc.publisher | Elsevier Science | |
dc.relation.isbasedon | P-001-4GZ | |
dc.title | Photocurrents in P3MeT Schottky barrier diodes | |
dc.type | journal article | |
dspace.entity.type | Publication | |
oaire.citation.conferencePlace | Montpellier, France | |
oaire.citation.endPage | 432 | |
oaire.citation.startPage | 431 | |
oaire.citation.title | Synthetic Metals | |
oaire.citation.title | International Conference on Science and Technology of Synthetic Metals (ICSM 98) | |
oaire.citation.volume | 101 | |
person.familyName | Gomes | |
person.givenName | Henrique Leonel | |
person.identifier.orcid | 0000-0003-3664-4740 | |
person.identifier.scopus-author-id | 7005305880 | |
rcaap.rights | restrictedAccess | |
rcaap.type | article | |
relation.isAuthorOfPublication | 6da677b9-927f-423d-8657-448a0dccb67c | |
relation.isAuthorOfPublication.latestForDiscovery | 6da677b9-927f-423d-8657-448a0dccb67c |
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