Investigation of electron acceptor states in poly(3-methylthiophene)

Taylor, D. M.; Gomes, Henrique L.

http://hdl.handle.net/10400.1/6611

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Autores

Taylor, D. M.

Gomes, Henrique L.

Resumo(s)

Both the DC and AC admittance of Schottky barrier diodes formed at the interface of aluminium and poly(3-methyl thiophene) have been investigated in some detail. The capacitance-voltage plots for the devices suggest the presence of two acceptor states, one shallow and one deep. The total concentration of acceptor states, 10 24-10 26 m -3 depending on the degree of undoping, agrees well with estimates from the reverse I-V characteristics assuming image force lowering of the interfacial potential barrier.

URI

http://hdl.handle.net/10400.1/6611

Editora

IEEE

DOI

http://dx.doi.org/ 10.1109/CEIDP.1995.483807

Coleções

FCT2-Artigos (em revistas ou actas indexadas)

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