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Investigation of electron acceptor states in poly(3-methylthiophene)

dc.contributor.authorTaylor, D. M.
dc.contributor.authorGomes, Henrique L.
dc.date.accessioned2015-06-26T14:18:43Z
dc.date.available2015-06-26T14:18:43Z
dc.date.issued1995
dc.description.abstractBoth the DC and AC admittance of Schottky barrier diodes formed at the interface of aluminium and poly(3-methyl thiophene) have been investigated in some detail. The capacitance-voltage plots for the devices suggest the presence of two acceptor states, one shallow and one deep. The total concentration of acceptor states, 10 24-10 26 m -3 depending on the degree of undoping, agrees well with estimates from the reverse I-V characteristics assuming image force lowering of the interfacial potential barrier.
dc.identifier.doihttp://dx.doi.org/ 10.1109/CEIDP.1995.483807
dc.identifier.issn0084-9162
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6611
dc.language.isoeng
dc.peerreviewedyes
dc.publisherIEEE
dc.relation.isbasedonP-008-W1C
dc.titleInvestigation of electron acceptor states in poly(3-methylthiophene)
dc.typeconference object
dspace.entity.typePublication
oaire.citation.conferencePlaceVirginia Beach, VA, USA
oaire.citation.endPage645
oaire.citation.startPage642
oaire.citation.titleConference on Electrical Insulation and Dielectric Phenomena (CEIDP), Annual Report
oaire.citation.titleProceedings of the 1995 Conference on Electrical Insulation and Dielectric Phenomena
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typeconferenceObject
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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