Electronic transport in field-effect transistors of sexithiophene

Stallinga, Peter; Gomes, Henrique L.; Biscarini, F.; Murgia, M.; De Leeuw, D. M.

http://hdl.handle.net/10400.1/6625

Use this identifier to reference this record.

Name:	Description:	Size:	Format:
Electronic transport in field-effect transistors of sexithiophene.pdf		540.23 KB	Adobe PDF	Download

Send Feedback

Authors

Abstract(s)

The electronic conduction of thin-film field-effect-transistors (FETs) of sexithiophene was studied. In most cases the transfer curves deviate from standard FET theory; they are not linear, but follow a power law instead. These results are compared to conduction models of "variable-range hopping" and "multi-trap-and-release". The accompanying IV curves follow a Poole-Frenkel (exponential) dependence on the drain voltage. The results are explained assuming a huge density of traps. Below 200 K, the activation energy for conduction was found to be ca. 0.17 eV. The activation energies of the mobility follow the Meyer-Neldel rule. A sharp transition is seen in the behavior of the devices at around 200 K. The difference in behavior of a micro-FET and a submicron FET is shown. (C) 2004 American Institute of Physics.