Publication
Electronic transport in field-effect transistors of sexithiophene
| dc.contributor.author | Stallinga, Peter | |
| dc.contributor.author | Gomes, Henrique L. | |
| dc.contributor.author | Biscarini, F. | |
| dc.contributor.author | Murgia, M. | |
| dc.contributor.author | De Leeuw, D. M. | |
| dc.date.accessioned | 2015-06-26T14:18:45Z | |
| dc.date.available | 2015-06-26T14:18:45Z | |
| dc.date.issued | 2004 | |
| dc.description.abstract | The electronic conduction of thin-film field-effect-transistors (FETs) of sexithiophene was studied. In most cases the transfer curves deviate from standard FET theory; they are not linear, but follow a power law instead. These results are compared to conduction models of "variable-range hopping" and "multi-trap-and-release". The accompanying IV curves follow a Poole-Frenkel (exponential) dependence on the drain voltage. The results are explained assuming a huge density of traps. Below 200 K, the activation energy for conduction was found to be ca. 0.17 eV. The activation energies of the mobility follow the Meyer-Neldel rule. A sharp transition is seen in the behavior of the devices at around 200 K. The difference in behavior of a micro-FET and a submicron FET is shown. (C) 2004 American Institute of Physics. | |
| dc.identifier.doi | https://dx.doi.org/10.1063/1.1789279 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.other | AUT: PJO01566; HGO00803; | |
| dc.identifier.uri | http://hdl.handle.net/10400.1/6625 | |
| dc.language.iso | eng | |
| dc.peerreviewed | yes | |
| dc.publisher | American Institute of Physics | |
| dc.relation.isbasedon | P-000-7WX | |
| dc.title | Electronic transport in field-effect transistors of sexithiophene | |
| dc.type | journal article | |
| dspace.entity.type | Publication | |
| oaire.citation.endPage | 5283 | |
| oaire.citation.startPage | 5277 | |
| oaire.citation.title | Journal of Applied Physics | |
| oaire.citation.volume | 96 | |
| person.familyName | Stallinga | |
| person.familyName | Gomes | |
| person.givenName | Peter | |
| person.givenName | Henrique Leonel | |
| person.identifier | 2477494 | |
| person.identifier.ciencia-id | C917-2333-5797 | |
| person.identifier.orcid | 0000-0002-9581-6875 | |
| person.identifier.orcid | 0000-0003-3664-4740 | |
| person.identifier.scopus-author-id | 6701332987 | |
| person.identifier.scopus-author-id | 7005305880 | |
| rcaap.rights | openAccess | |
| rcaap.type | article | |
| relation.isAuthorOfPublication | a81fc5fb-94ec-4160-bfdc-ea33cfdbf216 | |
| relation.isAuthorOfPublication | 6da677b9-927f-423d-8657-448a0dccb67c | |
| relation.isAuthorOfPublication.latestForDiscovery | a81fc5fb-94ec-4160-bfdc-ea33cfdbf216 |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- Electronic transport in field-effect transistors of sexithiophene.pdf
- Size:
- 540.23 KB
- Format:
- Adobe Portable Document Format