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Electrical instabilities in organic semiconductors caused by trapped supercooled water

dc.contributor.authorGomes, Henrique L.
dc.contributor.authorStallinga, Peter
dc.contributor.authorColle, M.
dc.contributor.authorDe Leeuw, D. M.
dc.contributor.authorBiscarini, F.
dc.date.accessioned2015-06-26T14:18:44Z
dc.date.available2015-06-26T14:18:44Z
dc.date.issued2006
dc.description.abstractIt is reported that the electrical instability known as bias stress is caused by the presence of trapped water in the organic layer. Experimental evidence as provided by the observation of an anomaly occurring systematically at around 200 K. This anomaly is observed in a variety of materials, independent of the deposition techniques and remarkably coincides with a known phase transition of supercooled water. Confined water does not crystallize at 273 K but forms a metastable liquid. This metastable water behaves electrically as a charge trap, which causes the instability. Below 200 K the water finally solidifies and the electrical traps disappear. (c) 2006 American Institute of Physics.
dc.identifier.doihttps://dx.doi.org/10.1063/1.2178410
dc.identifier.issn0003-6951
dc.identifier.otherAUT: PJO01566; HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6613
dc.language.isoeng
dc.peerreviewedyes
dc.publisherAmerican Institute of Physics
dc.relation.isbasedonP-004-N80
dc.titleElectrical instabilities in organic semiconductors caused by trapped supercooled water
dc.typejournal article
dspace.entity.typePublication
oaire.citation.titleApplied Physics Letters
oaire.citation.volume88
person.familyNameGomes
person.familyNameStallinga
person.givenNameHenrique Leonel
person.givenNamePeter
person.identifier2477494
person.identifier.ciencia-idC917-2333-5797
person.identifier.orcid0000-0003-3664-4740
person.identifier.orcid0000-0002-9581-6875
person.identifier.scopus-author-id7005305880
person.identifier.scopus-author-id6701332987
rcaap.rightsopenAccess
rcaap.typearticle
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublicationa81fc5fb-94ec-4160-bfdc-ea33cfdbf216
relation.isAuthorOfPublication.latestForDiscoverya81fc5fb-94ec-4160-bfdc-ea33cfdbf216

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