Modelling of optoelectronic circuits based on resonant tunneling diodes

Rei, João F. M.; Foot, James A.; Rodrigues, Gil; Figueiredo, José

http://hdl.handle.net/10400.1/13321

Utilize este identificador para referenciar este registo.

Nome:	Descrição:	Tamanho:	Formato:
Rei_AOP_2017_1045308.pdf		904.47 KB	Adobe PDF	Ver/Abrir

Contacte-nos

Autores

Resumo(s)

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient response. We will present and discuss the models, and evaluate the simulation packages.