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Electrical AC behaviour of MPCVD diamond Schottky diodes

2001Journal article Restricted
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dc.contributor.authorPereira, L.
dc.contributor.authorRodrigues, A.
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorPereira, E.
dc.date.accessioned2015-06-26T14:18:48Z
dc.date.available2015-06-26T14:18:48Z
dc.date.issued2001
dc.description.abstractThe present work reports some experimental results on the electrical AC behaviour of metal-undoped diamond Schottky diodes fabricated with a free-standing MPCVD diamond film (5 mum thick). The metals are gold for the ohmic contact and aluminium for the rectifier. The capacitance and loss tangent vs, frequency shows that capacitance presents a relaxation maximum at frequencies near 10 kHz at room temperature. Although the simple model (small equivalent circuit) can justify the values for the relaxation, it cannot justify the departure from the Debye model, also verified in the Cole-Cole plot. Taking into account the existence of traps in the depletion region, a best fit to the experimental results was obtained. The difference between the Fermi level and the band edge of 0.2-0.3 eV is in agreement with the activation energy found from the loss tangent analysis. The capacitance with applied voltage (Mott-Schottky plots) gives a defect density of 10(16) cm(-3) with contact potentials near 0.5 V and the profile of defect density obtained shows a major density (approx. 10(17) cm(-3)) in a layer with a thickness less than 50 nm from the junction, decreasing by one order of magnitude with increasing distance. Finally a structural model is proposed to explain the AC behaviour found. (C) 2001 Elsevier Science B.V. All rights reserved.
dc.identifier.doihttps://dx.doi.org/10.1016/S0925-9635(00)00442-8
dc.identifier.issn0925-9635
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6649
dc.language.isoeng
dc.peerreviewedyes
dc.publisherElsevier
dc.relation.isbasedonP-000-W78
dc.titleElectrical AC behaviour of MPCVD diamond Schottky diodes
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlacePorto, Portugal
oaire.citation.endPage619
oaire.citation.issue3-7
oaire.citation.startPage615
oaire.citation.titleDiamond and Related Materials
oaire.citation.title11th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (Diamond 2000)
oaire.citation.volume10
person.familyNameRodrigues
person.familyNameGomes
person.givenNameAna Maria
person.givenNameHenrique Leonel
person.identifier.orcid0000-0001-7207-3143
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublication45d07888-40a6-47cd-8769-ca71da551513
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery45d07888-40a6-47cd-8769-ca71da551513

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