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Modeling electrical characteristics of thin-film field-effect transistors I. Trap-free materials

dc.contributor.authorStallinga, Peter
dc.contributor.authorGomes, Henrique L.
dc.date.accessioned2015-06-26T14:18:42Z
dc.date.available2015-06-26T14:18:42Z
dc.date.issued2006
dc.description.abstractA new analytical model is developed for thin-film field-effect transistors (TFTs). The active layer of the devices is considered purely two-dimensional. In the first part, the basic model is developed for intrinsic materials. It is demonstrated that it accurately describes the electrical characteristics and elucidates on the physical meaning of the device and material parameters, such as threshold voltage and sub-threshold current. It also clarifies the nature of so-called contact effects, often used in literature to explain non-linear I-V curves. Furthermore, ambipolar devices are treated. (c) 2006 Elsevier B.V. All rights reserved.
dc.identifier.doihttps://dx.doi.org/10.1016/j.synthmet.2006.09.015
dc.identifier.issn0379-6779
dc.identifier.otherAUT: PJO01566; HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6604
dc.language.isoeng
dc.peerreviewedyes
dc.publisherElsevier
dc.relation.isbasedonP-004-FZB
dc.titleModeling electrical characteristics of thin-film field-effect transistors I. Trap-free materials
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage1315
oaire.citation.issue21-24
oaire.citation.startPage1305
oaire.citation.titleSynthetic Metals
oaire.citation.volume156
person.familyNameStallinga
person.familyNameGomes
person.givenNamePeter
person.givenNameHenrique Leonel
person.identifier2477494
person.identifier.ciencia-idC917-2333-5797
person.identifier.orcid0000-0002-9581-6875
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id6701332987
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublicationa81fc5fb-94ec-4160-bfdc-ea33cfdbf216
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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