Polycrystalline diamond thin film as wide bandgap material: the optoelectronic behaviour and the relationship with the structure

Pereira, L.; Pereira, E.; Rodrigues, A. M.; Gomes, Henrique L.

http://hdl.handle.net/10400.1/6608

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In this work metal - Microwave Plasma CVD diamond Schottky devices were studied. The current density vs. applied voltage reveals rectification ratios up to 10(4) at \ +/- 2V \. Under illumination an inversion and increase of the rectification is observed. The carrier density is 10(15) cm(-3) and the ideality factors near 1.5. The dark current vs. temperature shows that below 150 K the bulk transport is controlled by a hopping process with a density of defects of 10(16) cm(-3). For higher temperatures an extrinsic ionisation with activation energy of 0.3 eV takes place. The correlation with the polycrystalline nature of the samples is focused.