Light-emitting thin-film field-effect transistors

Stallinga, Peter; Gomes, Henrique L.

http://hdl.handle.net/10400.1/6623

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Authors

Stallinga, Peter

Gomes, Henrique L.

Abstract(s)

A model for thin-film field-effect transistors in which the active layer is treated as purely two-dimensional is applied to ambipolar devices that have shown to be light emitting. This results in an adequate description of the electrical characteristics.