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Publicação
Light-emitting thin-film field-effect transistors
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Autores
Stallinga, Peter
Gomes, Henrique L.
Orientador(es)
Resumo(s)
A model for thin-film field-effect transistors in which the active layer is treated as purely two-dimensional is applied to ambipolar devices that have shown to be light emitting. This results in an adequate description of the electrical characteristics.