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Study of trap states in zinc oxide (ZnO) thin films for electronic applications
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Orientador(es)
Resumo(s)
The electrical properties of ZnO thin films grown by pulsed laser deposition were studied. Field-effect devices with a mobility reaching 1 cm2/V s show non-linearities both in the current–voltage and in the transfer characteristics which are explained as due to the presence of trap states. These traps cause a reversible threshold voltage shift as revealed by low-frequency capacitance–voltage measurements in
metal insulator semiconductor (MIS) capacitors. Thermal detrapping experiments in heterojunctions confirm the presence of a trap state located at 0.32 eV.
Descrição
Palavras-chave
Thin film transistors Thermally stimulated and depolarization current Laser deposition Defects
Contexto Educativo
Citação
Casteleiro, C.; Gomes, H. L.; Stallinga, P.; Bentes, L.; Ayouchi, R.; Schwarz, R. Study of trap states in zinc oxide (ZnO) thin films for electronic applications, Journal of Non-Crystalline Solids, 354, 19-25, 2519-2522, 2008.
Editora
Elsevier