Study of trap states in zinc oxide (ZnO) thin films for electronic applications

Casteleiro, C.; Gomes, Henrique L.; Stallinga, Peter; Bentes, L.; Ayouchi, R.; Schwarz, R.

http://hdl.handle.net/10400.1/3298

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Authors

Casteleiro, C.

Gomes, Henrique L.

Stallinga, Peter

Bentes, L.

Ayouchi, R.

Schwarz, R.

Abstract(s)

The electrical properties of ZnO thin films grown by pulsed laser deposition were studied. Field-effect devices with a mobility reaching 1 cm2/V s show non-linearities both in the current–voltage and in the transfer characteristics which are explained as due to the presence of trap states. These traps cause a reversible threshold voltage shift as revealed by low-frequency capacitance–voltage measurements in metal insulator semiconductor (MIS) capacitors. Thermal detrapping experiments in heterojunctions confirm the presence of a trap state located at 0.32 eV.

Keywords

Thin film transistors Thermally stimulated and depolarization current Laser deposition Defects

URI

http://hdl.handle.net/10400.1/3298

Citation

Casteleiro, C.; Gomes, H. L.; Stallinga, P.; Bentes, L.; Ayouchi, R.; Schwarz, R. Study of trap states in zinc oxide (ZnO) thin films for electronic applications, Journal of Non-Crystalline Solids, 354, 19-25, 2519-2522, 2008.