DLTS investigation of acceptor states in P3MeT Schottky barrier diodes

Jones, G. W.; Taylor, D. M.; Gomes, Henrique L.

http://hdl.handle.net/10400.1/6593

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Autores

Jones, G. W.

Taylor, D. M.

Gomes, Henrique L.

Resumo(s)

Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower component using the ''rate window'' technique yields isochronal differential capacitance curves that depend on temperature in the manner predicted by theory.

URI

http://hdl.handle.net/10400.1/6593

Editora

Elsevier Science

DOI

https://dx.doi.org/10.1016/S0379-6779(97)80262-7

Coleções

FCT2-Artigos (em revistas ou actas indexadas)

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