Publication
DLTS investigation of acceptor states in P3MeT Schottky barrier diodes
dc.contributor.author | Jones, G. W. | |
dc.contributor.author | Taylor, D. M. | |
dc.contributor.author | Gomes, Henrique L. | |
dc.date.accessioned | 2015-06-26T14:18:41Z | |
dc.date.available | 2015-06-26T14:18:41Z | |
dc.date.issued | 1997 | |
dc.description.abstract | Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower component using the ''rate window'' technique yields isochronal differential capacitance curves that depend on temperature in the manner predicted by theory. | |
dc.identifier.doi | https://dx.doi.org/10.1016/S0379-6779(97)80262-7 | |
dc.identifier.issn | 0379-6779 | |
dc.identifier.other | AUT: HGO00803; | |
dc.identifier.uri | http://hdl.handle.net/10400.1/6593 | |
dc.language.iso | eng | |
dc.peerreviewed | yes | |
dc.publisher | Elsevier Science | |
dc.relation.isbasedon | P-001-BZ7 | |
dc.title | DLTS investigation of acceptor states in P3MeT Schottky barrier diodes | |
dc.type | journal article | |
dspace.entity.type | Publication | |
oaire.citation.conferencePlace | Snowbird | |
oaire.citation.endPage | 1342 | |
oaire.citation.issue | 1-3 | |
oaire.citation.startPage | 1341 | |
oaire.citation.title | Synthetic Metals | |
oaire.citation.title | International Conference on the Science and Technology of Synthetic Metals | |
oaire.citation.volume | 85 | |
person.familyName | Gomes | |
person.givenName | Henrique Leonel | |
person.identifier.orcid | 0000-0003-3664-4740 | |
person.identifier.scopus-author-id | 7005305880 | |
rcaap.rights | restrictedAccess | |
rcaap.type | article | |
relation.isAuthorOfPublication | 6da677b9-927f-423d-8657-448a0dccb67c | |
relation.isAuthorOfPublication.latestForDiscovery | 6da677b9-927f-423d-8657-448a0dccb67c |
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