Repository logo
 
Publication

DLTS investigation of acceptor states in P3MeT Schottky barrier diodes

dc.contributor.authorJones, G. W.
dc.contributor.authorTaylor, D. M.
dc.contributor.authorGomes, Henrique L.
dc.date.accessioned2015-06-26T14:18:41Z
dc.date.available2015-06-26T14:18:41Z
dc.date.issued1997
dc.description.abstractDeep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower component using the ''rate window'' technique yields isochronal differential capacitance curves that depend on temperature in the manner predicted by theory.
dc.identifier.doihttps://dx.doi.org/10.1016/S0379-6779(97)80262-7
dc.identifier.issn0379-6779
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6593
dc.language.isoeng
dc.peerreviewedyes
dc.publisherElsevier Science
dc.relation.isbasedonP-001-BZ7
dc.titleDLTS investigation of acceptor states in P3MeT Schottky barrier diodes
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceSnowbird
oaire.citation.endPage1342
oaire.citation.issue1-3
oaire.citation.startPage1341
oaire.citation.titleSynthetic Metals
oaire.citation.titleInternational Conference on the Science and Technology of Synthetic Metals
oaire.citation.volume85
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

Files

Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
DLTS investigation of acceptor states in P3MeT Schottky barrier diodes.pdf
Size:
207.54 KB
Format:
Adobe Portable Document Format