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Electrical conduction of LiF interlayers in organic diodes

2015-04Journal article Open Access
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dc.contributor.authorBory, Benjamin F.
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorJanssen, Rene
dc.contributor.authorde Leeuw, Dago M.
dc.contributor.authorMeskers, Stefan
dc.date.accessioned2018-12-07T14:52:34Z
dc.date.available2018-12-07T14:52:34Z
dc.date.issued2015-04
dc.description.abstractAn interlayer of LiF in between a metal and an organic semiconductor is commonly used to improve the electron injection. Here, we investigate the effect of moderate bias voltages on the electrical properties of Al/LiF/poly(spirofluorene)/Ba/Al diodes by systematically varying the thickness of the LiF layer (2-50 nm). Application of forward bias V below the bandgap of LiF (V < E-g similar to 14 V) results in reversible formation of an electrical double layer at the LiF/poly(spirofluorene) hetero-junction. Electrons are trapped on the poly(spirofluorene) side of the junction, while positively charged defects accumulate in the LiF with number densities as high as 10(25)/m(3). Optoelectronic measurements confirm the built-up of aggregated, ionized F centres in the LiF as the positive trapped charges. The charged defects result in efficient transport of electrons from the polymer across the LiF, with current densities that are practically independent of the thickness of the LiF layer. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
dc.description.sponsorshipFundacao para Ciencia e Tecnologia (FCT) through the research Instituto de Telecommunicacoes (IT-Lx); project Memristor based Adaptive Neuronal Networks (MemBrAiNN) [PTDC/CTM-NAN/122868/2010]; KAU [71-100-35-HiCi]; European Community [212311]; ONE-P; Dutch Ministry of Education, Culture and Science [024.001.035]
dc.description.versioninfo:eu-repo/semantics/publishedVersion
dc.identifier.doi10.1063/1.4917461
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.urihttp://hdl.handle.net/10400.1/11123
dc.language.isoeng
dc.peerreviewedyes
dc.publisherAmer Inst Physics
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectLight-emitting-diodes
dc.subjectAlkali-halides
dc.subjectDielectric-breakdown
dc.subjectHall-mobility
dc.subjectCathodes
dc.subjectElectrodes
dc.subjectInjection
dc.subjectEfficient
dc.subjectEmission
dc.subjectCrystals
dc.titleElectrical conduction of LiF interlayers in organic diodes
dc.typejournal article
dspace.entity.typePublication
oaire.citation.issue15
oaire.citation.startPage155502
oaire.citation.titleJournal of Applied Physics
oaire.citation.volume117
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsopenAccess
rcaap.typearticle
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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