Logo do repositório
 
Publicação

Modeling electrical characteristics of thin-film field-effect transistors II: Effects of traps and impurities

dc.contributor.authorStallinga, Peter
dc.contributor.authorGomes, Henrique L.
dc.date.accessioned2015-06-26T14:18:43Z
dc.date.available2015-06-26T14:18:43Z
dc.date.issued2006
dc.description.abstractBased on a new model for thin-film field-effect transistors, in which the active layer is treated as purely two-dimensional, the effects of impurities on the electrical characteristics are discussed. Localized electronic levels are introduced into the model. It is shown that the presence of traps readily accounts for the non-linearities in the current-voltage curves. Trap states can also explain the temperature dependence of the current and mobility, including the so-called Meyer-Neldel Rule. Finally, transients are qualitatively discussed. (c) 2006 Elsevier B.V. All rights reserved.
dc.identifier.doihttps://dx.doi.org/10.1016/j.synthmet.2006.09.008
dc.identifier.issn0379-6779
dc.identifier.otherAUT: PJO01566; HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6606
dc.language.isoeng
dc.peerreviewedyes
dc.publisherElsevier
dc.relation.isbasedonP-004-FZC
dc.titleModeling electrical characteristics of thin-film field-effect transistors II: Effects of traps and impurities
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage1326
oaire.citation.issue21-24
oaire.citation.startPage1316
oaire.citation.titleSynthetic Metals
oaire.citation.volume156
person.familyNameStallinga
person.familyNameGomes
person.givenNamePeter
person.givenNameHenrique Leonel
person.identifier2477494
person.identifier.ciencia-idC917-2333-5797
person.identifier.orcid0000-0002-9581-6875
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id6701332987
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublicationa81fc5fb-94ec-4160-bfdc-ea33cfdbf216
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

Ficheiros

Principais
A mostrar 1 - 1 de 1
Miniatura indisponível
Nome:
Modeling electrical characteristics of thin-film field-effect transistors II Effects of traps and impurities.pdf
Tamanho:
970.19 KB
Formato:
Adobe Portable Document Format