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Voltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interface

dc.contributor.authorLancaster, J.
dc.contributor.authorTaylor, D. M.
dc.contributor.authorSayers, P.
dc.contributor.authorGomes, Henrique L.
dc.date.accessioned2015-06-26T14:18:41Z
dc.date.available2015-06-26T14:18:41Z
dc.date.issued2007
dc.description.abstractCapacitance-voltage (C-V) measurements have been undertaken on metal-insulator-semiconductor capacitors formed from atomic-layer-deposited films of aluminium titanium oxide as the insulator and poly(3-hexylthiophene) as the insulator. Upon cycling from -30 to +30 V in the dark, the C-V plots show large, temperature-dependent, reversible shifts in the flatband voltage to more negative voltages consistent with reversible, shallow hole trapping at or near the insulator-semiconductor interface. When illuminated with photons of energy exceeding the polymer band gap, even larger shifts to positive voltages are observed accompanied by inversion layer formation. This latter effect has potential applications in optical sensing. (c) 2007 American Institute of Physics.
dc.identifier.doihttps://dx.doi.org/10.1063/1.2711531
dc.identifier.issn0003-6951
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6597
dc.language.isoeng
dc.peerreviewedyes
dc.publisherAmerican Institute of Physics
dc.relation.isbasedonP-004-B7H
dc.titleVoltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interface
dc.typejournal article
dspace.entity.typePublication
oaire.citation.startPage103513
oaire.citation.titleApplied Physics Letters
oaire.citation.volume90
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsopenAccess
rcaap.typearticle
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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