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Interface state mapping in a Schottky barrier of the organic semiconductor terrylene

dc.contributor.authorStallinga, Peter
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorMurgia, M.
dc.contributor.authorMullen, K.
dc.date.accessioned2015-06-26T14:18:47Z
dc.date.available2015-06-26T14:18:47Z
dc.date.issued2002
dc.description.abstractIn this work we quantitatively map interface states in energy in a Schottky barrier between aluminum and the vacuum sublimed organic semiconductor terrylene. The density map of these interface states was extracted from the, admittance spectroscopy data. They revealed an interface state density of 2 x 10(12). cm(-2)eV(-1) close to the valence band which decreases slightly towards midgap. Additional do measurements show that the semiconductor bulk activation energy is 0.33 eV which may correspond to an acceptor level. (C) 2002 Elsevier Science B.V. All rights reserved.
dc.identifier.doihttps://dx.doi.org/10.1016/S1566-1199(02)00024-1
dc.identifier.issn1566-1199
dc.identifier.urihttp://hdl.handle.net/10400.1/6640
dc.language.isoeng
dc.peerreviewedyes
dc.publisherElsevier
dc.relation.isbasedonP-000-Q7N
dc.titleInterface state mapping in a Schottky barrier of the organic semiconductor terrylene
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage51
oaire.citation.startPage43
oaire.citation.titleOrganic Electronics
oaire.citation.volume3
person.familyNameStallinga
person.familyNameGomes
person.givenNamePeter
person.givenNameHenrique Leonel
person.identifier2477494
person.identifier.ciencia-idC917-2333-5797
person.identifier.orcid0000-0002-9581-6875
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id6701332987
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublicationa81fc5fb-94ec-4160-bfdc-ea33cfdbf216
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscoverya81fc5fb-94ec-4160-bfdc-ea33cfdbf216

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