Planar non-volatile memory based on metal nanoparticles

Kiazadeh, Asal; Gomes, Henrique L.; Costa, Ana M. Rosa da; Rocha, P. R. F.; Chen, Q.; Moreira, José; De Leeuw, Dago M.; Meskers, S. C. J.

http://hdl.handle.net/10400.1/3230

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Authors

Kiazadeh, Asal

Gomes, Henrique L.

Costa, Ana M. Rosa da

Abstract(s)

Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

Keywords

Electrical properties Nanostructure Ag

URI

http://hdl.handle.net/10400.1/3230

Citation

Kiazadeh, Asal; Gomes, Henrique L.; Da Costa, A. M. Rosa; Rocha, P.; Chen, Q.; Moreira, José A.; de Leeuw, Dago M.; Meskers, Stefan C. J.Planar Non-Volatile Memory based on Metal Nanoparticles, MRS Proceedings, 1337, n/a, 151-156, 2011.