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Publicação
Planar non-volatile memory based on metal nanoparticles
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Orientador(es)
Resumo(s)
Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.
Descrição
Palavras-chave
Electrical properties Nanostructure Ag
Contexto Educativo
Citação
Kiazadeh, Asal; Gomes, Henrique L.; Da Costa, A. M. Rosa; Rocha, P.; Chen, Q.; Moreira, José A.; de Leeuw, Dago M.; Meskers, Stefan C. J.Planar Non-Volatile Memory based on Metal Nanoparticles, MRS Proceedings, 1337, n/a, 151-156, 2011.
Editora
Cambridge University Press