Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/3254
Título: Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors
Autor: Andringa, Anne-Marije
Vlietstra, N.
Smits, E. C. P.
Spijkman, Mark-Jan
Gomes, Henrique L.
Klootwijk, J. H.
Blom, P. W. M.
De Leeuw, Dago M.
Palavras-chave: NO2 sensors
Field-effect transistor
Charge carrier trapping
Threshold voltage shift
Stretched-exponential
Thermally stimulated current
Activation energy
Data: 2012
Editora: Elsevier
Citação: Andringa, Anne-Marije; Vlietstra, Nynke; Smits, Edsger C. P.; Spijkman, Mark-Jan; Gomes, Henrique L.; Klootwijk, Johan H.; Blom, Paul W. M.; de Leeuw, Dago M. Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors, Sensors and Actuators B-Chemical, 171, NA, 1172-11, 2012.
Resumo: Nitrogen dioxide (NO2) detection with ZnO field-effect transistors is based on charge carrier trapping. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a stretched-exponential time dependence with thermally activated relaxation times. We find an activation energy of 0.1 eV for trapping and 1.2 eV for detrapping. The attempt-to-escape frequency and characteristic temperature have been determined as 1 Hz and 960 K for charge trapping and 1011 Hz and 750 K for recovery, respectively. Thermally stimulated current measurements confirm the presence of trapped charge carriers with a trap depth of around 1 eV. The obtained functional dependence is used as input for an analytical model that predicts the sensor’s temporal behavior. The model is experimentally verified and a real-time sensor has been developed. The perfect agreement between predicted and measured sensor response validates the methodology developed. The analytical description can be used to optimize the driving protocol. By adjusting the operating temperature and the duration of charging and resetting, the response time can be optimized and the sensitivity can be maximized for the desired partial NO2 pressure window.
Peer review: yes
URI: http://hdl.handle.net/10400.1/3254
DOI: http://dx.doi.org/10.1016/j.snb.2012.06.062
ISSN: 0925-4005
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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