Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/6625
Título: Electronic transport in field-effect transistors of sexithiophene
Autor: Stallinga, Peter
Gomes, Henrique L.
Biscarini, F.
Murgia, M.
De Leeuw, D. M.
Data: 2004
Editora: American Institute of Physics
Resumo: The electronic conduction of thin-film field-effect-transistors (FETs) of sexithiophene was studied. In most cases the transfer curves deviate from standard FET theory; they are not linear, but follow a power law instead. These results are compared to conduction models of "variable-range hopping" and "multi-trap-and-release". The accompanying IV curves follow a Poole-Frenkel (exponential) dependence on the drain voltage. The results are explained assuming a huge density of traps. Below 200 K, the activation energy for conduction was found to be ca. 0.17 eV. The activation energies of the mobility follow the Meyer-Neldel rule. A sharp transition is seen in the behavior of the devices at around 200 K. The difference in behavior of a micro-FET and a submicron FET is shown. (C) 2004 American Institute of Physics.
Peer review: yes
URI: http://hdl.handle.net/10400.1/6625
DOI: https://dx.doi.org/10.1063/1.1789279
ISSN: 0021-8979
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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