Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/6629
Título: Bias-induced threshold voltages shifts in thin-film organic transistors
Autor: Gomes, Henrique L.
Stallinga, Peter
Dinelli, F.
Murgia, M.
Biscarini, F.
De Leeuw, D. M.
Muck, T.
Geurts, J.
Molenkamp, L. W.
Wagner, V.
Data: 2004
Editora: American Institute of Physics
Resumo: An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at Tapproximate to220 K and the other at Tapproximate to300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters. (C) 2004 American Institute of Physics.
Peer review: yes
URI: http://hdl.handle.net/10400.1/6629
DOI: https://dx.doi.org/10.1063/1.1713035
ISSN: 0003-6951
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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